PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN co

文件：408.48 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN co

文件：408.48 Kbytes 页数：6 Pages

PANJIT

強茂

低电压双极晶体管

Panjit

強茂

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 1A SOT223

Panjit International Inc.