PBHV9040Z

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

Generaldescription PNPhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Highvoltage ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandIC

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PBHV9040Z

丝印：V9040Z；Package：SC-73；500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

Features *Highvoltage *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *AEC-Q101qualified

PBHV9040Z

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor; • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n;

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z.\n

PBHV9040Z

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor;

恩XP

PBHV9040Z-Q

500 V, 0.25 A PNP high-voltage low VCEsat transistor; • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBHV8540Z-Q\n

PBHV9040Z/ZLF

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.25A SOT223

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PBHV9040Z/ZLX

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.25A SOT223

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PBHV9040ZF

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBHV9040Z/SOT223/SC-73

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