500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and IC

文件：137.81 Kbytes 页数：12 Pages

恩XP

丝印：V9040Z；Package：SC-73；500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified

文件：252.68 Kbytes 页数：13 Pages

NEXPERIA

安世

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

恩XP

500 V, 0.25 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBHV8540Z-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.25A SOT223

Nexperia USA Inc.

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.25A SOT223

Nexperia USA Inc.

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBHV9040Z/SOT223/SC-73

Nexperia USA Inc.