PB606BX

N-Channel Enhancement Mode Field Effect Transistor

PB606BX

Power MOSFET;

PBPC606

6.0ABRIDGERECTIFIER

PBPC606

6.0ABRIDGERECTIFIER

Features •HighCurrentCapability •SurgeOverloadRatingto125APeak •HighCaseDielectricStrengthof1500V •IdealforPrintedCircuitBoardApplication •ULListed:RecognizedComponentIndex,FileNumberE94661

PBU606

6.0ABRIDGERECTIFIER

Features DiffusedJunction LowForwardVoltageDrop,HighCurrentCapability SurgeOverloadRatingto250APeak IdealforPrintedCircuitBoardApplications CasetoTerminalIsolationVoltage1500V PlasticMaterial:ULFlammability ClassificationRating94V-0

PBU606

GLASSPASSIVATEDBRIDGERECTIFIERS

PBU606

GLASSPASSIVATEDBRIDGERECTIFIERS

PCR606

SiliconPlanarPNPNThyristors

PCR606

SCRs

Description Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurpose switchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlyto microcontrollers,logicintegratedcircuitsandotherlowpowergatetriggercircu

PCR606J

SensitiveGateSiliconControlledRectifiers

Features ◆RepetitivePeakOff-StateVoltage:600V ◆R.M.SOn-StateCurrent(IT(RMS)=0.6A) ◆LowOn-StateVoltage(1.2V(Typ.)@ITM) GeneralDescription SensitivetriggeringSCRissuitablefortheapplicationwhere gatecurrentlimitedsuchassmallmotorcontrol,gatedriver forlar