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20 V, 4 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5420D. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren

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20 V, 4 A NPN low VCEsat (BISS) transistor

Features * Very low collector-emitter saturation resistance * Ultra low collector-emitter saturation voltage * 4 A continuous collector current * Up to 15 A peak current * High efficiency due to less heat generation

文件：246.43 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

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