SE2303

SOT-23Plastic-EncapsulateMOSFETS

SI2303

P-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •-30V,-2.6A,RDS(ON)=130mΩ@VGS=-10V -30V,-2.0A,RDS(ON)=180mΩ@VGS=-4.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:S3

SI2303

SOT-23Plastic-EncapsulateMOSFETS

FEATURE APPLICATION TrenchFETPowerMOSFET LoadSwitchforPortableDevices DC/DCConverter

SI2303

SOT-23Plastic-EncapsulateMOSFETS

FEATURE ※TrenchFETPowerMOSFET APPLICATION ※LoadSwitchforPortableDevices ※DC/DCConverter

SI2303ADS

P-Channel,30-V(D-S)MOSFET

PRODUCTSUMMARY VDS(V)    rDS(on)(Ω)                   ID(A) –30          0.240@VGS=–10V     –1.4                 0.460@VGS=–4.5V    –1.0

SI2303BDS

P-Channel30-V(D-S)MOSFET

SI2303BDS

P-Channel,30-V(D-S)MOSFET

FEATURES •Halogen-freeOptionAvailable

SI2303BDS

P-ChannelEnhancementMOSFET

■Features ●VDS(V)=-30V ●RDS(ON)

SI2303BDS_RC

R-CThermalModelParameters

SI2303BDS-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●RDS(ON)