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GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL22V10D-10LP

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

详细参数

  • 型号:

    PALC22V10D-10PI

  • 制造商:

    CYPRESS

  • 制造商全称:

    Cypress Semiconductor

  • 功能描述:

    Flash Erasable, Reprogrammable CMOS PAL㈢ Device

供应商型号品牌批号封装库存备注价格
24+
5000
公司存货
询价
CYPRESS
22+
null
7860
原装现货
询价
CYPRESS
23+
null
8000
只做原装现货
询价
CYPRESS
23+
null
7000
询价
CYPRESS/赛普拉斯
23+
DIP24
73556
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
AMD
24+
CDIP-28
4650
询价
英飞凌/赛普拉斯
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
CYPRESS/赛普拉斯
22+
CDIP
12245
现货,原厂原装假一罚十!
询价
AMD
2023+
CDIP-28
50000
原装现货
询价
CYPRESS
23+
PLCC-28
9526
询价
更多PALC22V10D-10PI供应商 更新时间2025-7-25 16:01:00