丝印：PA2；Package：U-DFN1610-2；1 CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Applications  Cellular Ha

文件：278.9 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：PA2；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ D3V3S1U2LP1610Q

文件：404.92 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：PA2；Package：SOT563；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMG1023UVQ is suitable for a

文件：471.6 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：PA2；Package：SOT563；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMG1023UVQ is suitable for a

文件：471.6 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：PA2；Package：SOT23(TO-236)；20V P-Channel Enhancement-Mode MOSFET

文件：703.84 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：PA2；Package：SOT23(TO-236)；20V P-Channel Enhancement-Mode MOSFET

文件：703.84 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：PA2；Package：TSOP-5；LDO Regulator, 150 mA, 38V, 1 A IQ, with PG

文件：5.33016 Mbytes 页数：30 Pages

ONSEMI

安森美半导体

Ultra Linear Driver Amplifier - 1 Watt 1800 to 2000 MHz

Description The PA2001 is a is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with very low noise figure. The model is

文件：237.76 Kbytes 页数：1 Pages

MACOM

Ultra Linear Driver Amplifier - 1 Watt 1800 to 2000 MHz

Description The PA2001 is a is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with very low noise figure. The model is

文件：107.46 Kbytes 页数：1 Pages

MA-COM

Ultra Linear Driver Amplifier 1800 to 2000 MHz

Description The PA2003 is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with low noise figure. The model is parti

文件：115.69 Kbytes 页数：2 Pages

MA-COM