isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 280V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

Power MOSFETs 280V, 8A, N-channel

文件：2.11899 Mbytes 页数：8 Pages

SHINDENGEN

Power MOSFETs　THD

•Low Ron\n•High Speed Switching\n•High Avalanche Durability, High di/dt Durability;

Shindengen

新电元

Parallax
LQFP

Parallax

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