isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：315.98 Kbytes 页数：2 Pages

ISC

无锡固电

N - Channel Logic Level Enhancement Mode Field Effect Transistor

文件：52.69 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

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N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-263 (D2PAK)

NIKO-SEM

尼克森

N-Channel 20-V (D-S)175 C MOSFET

文件：902.33 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-channel 24V - 0.0068ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET

Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. Thisis suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. ■ RDS(ON)* Qg industry’s benchmark ■ Conduction losses redu

文件：817.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 25V - 0.0068廓 - 60A - DPAK - IPAK STripFET??III Power MOSFET

文件：376.79 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体