isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：312.96 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：182.12 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFETs　THD

•Isolated Package\n•Low Ron\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元