Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes • Peak pulse power dissipation 600 W • Nominal breakdown voltage 220...550 V • Plastic case ~ SMB • Weight approx. 0.1 g •

文件：78.99 Kbytes 页数：2 Pages

Diotec

德欧泰克

Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

文件：135.61 Kbytes 页数：3 Pages

Diotec

德欧泰克

SMD Transient Voltage Suppressor Diodes

文件：150.96 Kbytes 页数：3 Pages

Diotec

德欧泰克

SMD Transient Voltage Suppressor Diodes

文件：158.08 Kbytes 页数：3 Pages

Diotec

德欧泰克

bidirectional Transient Voltage Suppressor Diodes

文件：120.47 Kbytes 页数：3 Pages

Diotec

德欧泰克

表面贴装型瞬态抑制二极管

•10×1000μs波形时的峰值脉冲功率为600W，重复频率（工作循环）:0.01% \n• 出色的箝位能力 \n• 增量浪涌电阻较低 \n• 正常情况下，当VBR最小值>12V时，IR小于1μA \n• 经过优化的表面贴装可最大限度地减少对PCB空间的影响 \n• 小尺寸封装 \n• 由于超过最大额定值造成的典型故障模式为短路 \n• 锡丝测试基于JEDEC JESD201A表4a和4c \n• IEC 61000-4-2 ESD 30kV（空气放电），30kV（接触放电） \n• 数据线路EFT保护符合IEC 61000-4-4 \n• 内置式应力消除 \n• 快速的响应时间: t;

Littelfuse

力特

Package：DO-214AA，SMB；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 451VWM 761.25VC DO214

Littelfuse

力特

Transient Voltage Suppressors

FEATURES ◇ For surface mounted applications in order to optimize board space. ◇ Low profile package. ◇ Built-in strain relief. ◇ Glass passivated junction. ◇ Low inductance. ◇ Excellent clamping capability. ◇ Repetition Rate (duty cycle): 0.01. ◇ Fast response time: typically less than 1.0

文件：262.15 Kbytes 页数：4 Pages

MERITEK

丝印：530A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

eatures For surface mounted applications in order to optimize board space Low profile package Built in strain relief Gla ss p assivated j unction Low inductance Excellent clamping capability 600W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01%

文件：1.48908 Mbytes 页数：7 Pages

SY

顺烨电子

Excellent clamping capability

Features ● Peak power dissipation 600W @10 x 1000 us Pulse ● Low profile package. ● Excellent clamping capability. ● Glass passivated junction. ● Fast response time: typically less than 1ps from 0 Volts to BV min ● Typical IR less than 1uA when VBR min above 12V. ● IEC 61000-4-2 ESD

文件：479.67 Kbytes 页数：5 Pages

SEMITECH

海晨启半导体