N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：483.55 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK90ZFP；Package：TO-220FP；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：483.55 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体