isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：312.91 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：484.17 Kbytes 页数：4 Pages

SHINDENGEN

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：313.23 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs 75V, 66A, N-channel

文件：1.54002 Mbytes 页数：7 Pages

SHINDENGEN

Power MOSFETs　THD

•Isolated Package\n•Low Ron\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元

MOSFET

Shindengen

新电元