N-Channel 60-V (D-S) MOSFET

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VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

文件：985.94 Kbytes 页数：8 Pages

VBSEMI

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.012 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PAK (TO-262)

文件：87.02 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：318.76 Kbytes 页数：2 Pages

ISC

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