isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

Power MOSFET

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SHINDENGEN

Power MOSFETs　SMD

•SMD\n•Low Ron\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元

SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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EIC

SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

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EIC