丝印：P606280；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P606300；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P606330；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P606500；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P606ADJ；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：P60N08；Package：TO-220AB；80V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：333.37 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：P60NF06；Package：TO-220FP；N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer

文件：275.49 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P602-00DC；Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals

文件：272.55 Kbytes 页数：4 Pages

Micrel

麦瑞半导体

Ultra Low Current XO 10 MHz to 52 MHz

PLL

Low Power 5 Output XO 10MHz to 52MHz

PLL