丝印：p6；Package：SOT886；Low-power dual inverter with open-drain output

1. General description The 74AUP2G06 provides two inverting buffers with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Schmitt-trigger action at all inputs makes

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丝印：p6；Package：SOT1115；Low-power dual inverter with open-drain output

1. General description The 74AUP2G06 provides two inverting buffers with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Schmitt-trigger action at all inputs makes

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丝印：p6；Package：SOT1202；Low-power dual inverter with open-drain output

1. General description The 74AUP2G06 provides two inverting buffers with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Schmitt-trigger action at all inputs makes

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丝印：p6；Package：SOT363-2；Low-power dual inverter with open-drain output

1. General description The 74AUP2G06 provides two inverting buffers with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Schmitt-trigger action at all inputs makes

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丝印：P6；Package：SOT505-2；Triple buffer gate

1. General description The 74HC3G16 is a triple buffer. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • CMOS input levels • Complies wi

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丝印：P6；Package：SOT-343R；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

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PHI

丝印：P6；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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丝印：P6；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 3. Applications • Gene

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丝印：P6；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 • Qualified according to

文件：233.91 Kbytes 页数：14 Pages

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丝印：P6；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

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