isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.18903 Mbytes 页数：4 Pages

DOINGTER

杜因特

Power MOSFET

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SHINDENGEN

Power MOSFETs　THD

•Isolated Package\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元