isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.9Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.28079 Mbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFET

文件：180 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFETs　SMD

•SMD\n•Low Noise\n•Low Capacitance\n•High Avalanche Durability, High di/dt Durability;

Shindengen

新电元