P3622

POT TYPE CORES

PST3622NR

ICforCMOSSystemReset

PST3622UR

ICforCMOSSystemReset

STS3622

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-26package.

STS3622

DualN-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

TF3622

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheTF3622usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=25A RDS(ON)=

TF3622DS

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheTF3622DSisthehighestperformance trenchN-chMOSFETwithextremehighcell density,whichprovideexcellentRDSONand gatechargensformostofthesynchronous buckconverterapplications. TheTF3622DSmeettheRoHSandGreen Productrequirement,100EASguarante

TNM-C3622TDR

Bi-SpectrumAIThermalCamera

•Bi-spectrummonitoringwith2MPvisible&QVGAthermal •AIbasedObjectclassificationwithvisiblechannelonly(person) •RemoteTemperatureMonitoringwithin-20~130°Crange •6ofquadrangleROIareasfortemperaturemonitoring •CompactandLight-weightforIndoorpurpose

VS3622AD

N-ChannelMOSFETusesadvancedtrenchtechnology

VS3622AE

N-ChannelMOSFETusesadvancedtrenchtechnology