isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

Power MOSFET

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SHINDENGEN

Power MOSFETs　THD

•Isolated Package\n•Low Ron\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元

SOP8R

UTC/友顺

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TO-263-5

UTC(友顺)

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