N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：475.65 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N- & P-Channel Enhancement Mode Field Effect Transistor

[Niko-Sem] N- & P-Channel Enhancement Mode Field Effect Transistor

文件：526.84 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

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N-Channel Logic Level Enhancement

[Niko-Sem] N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：290.73 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

[Niko-Sem] Dual N-Channel Enhancement Mode Field Effect Transistor

文件：300.5 Kbytes 页数：5 Pages

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N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary

N-Channel & P-Channel Enhancement Mode Field Effect Transistor_Preliminary

文件：518.679 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

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N- & P-Channel Enhancement Mode Field Effect Transistor

[Niko-Sem] N- & P-Channel Enhancement Mode Field Effect Transistor

文件：518.78 Kbytes 页数：8 Pages

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N-Channel and P-Channel Enhancement Mode Power MOSFET

Features • N-Channel: 60V, 6A RDS(ON)

文件：1.16599 Mbytes 页数：9 Pages

Bychip

百域芯

5W HIGH POWER HBLED DRIVER

Description The PAM2808 is a 5W high power HBLED driver with 1.5A constant current. It features high efficiency and low quiescent current, making it ideal for battery powered applications. The PAM2808 features over current protection and over temperature shutdown. The PAM2808 is stable with a ce

文件：494.75 Kbytes 页数：8 Pages

DIODES

美台半导体

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

文件：38.4 Kbytes 页数：2 Pages

Polyfet

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim

文件：39.51 Kbytes 页数：2 Pages

Polyfet