P28

包装：散装 类别：工具 螺丝和螺母起子 描述：SCREWDRIVER PHILLIPS #2 11.63\

P2803BMG

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

P2803NVG

N- & P-Channel Enhancement Mode Field Effect Transistor

[Niko-Sem] N-&P-ChannelEnhancementModeFieldEffectTransistor

P2804BDG

N-Channel Logic Level Enhancement

[Niko-Sem] N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

P2804HVG

Dual N-Channel Enhancement Mode Field Effect Transistor

[Niko-Sem] DualN-ChannelEnhancementModeFieldEffectTransistor

P2804ND5G

N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary

N-Channel&P-ChannelEnhancementModeFieldEffectTransistor_Preliminary

P2804NVG

N- & P-Channel Enhancement Mode Field Effect Transistor

[Niko-Sem] N-&P-ChannelEnhancementModeFieldEffectTransistor

P2804NVG

N-Channel and P-Channel Enhancement Mode Power MOSFET

Features •N-Channel:60V,6A RDS(ON)

P2808

5W HIGH POWER HBLED DRIVER

Description ThePAM2808isa5WhighpowerHBLEDdriverwith1.5Aconstantcurrent.Itfeatureshighefficiencyandlowquiescentcurrent,makingitidealforbatterypoweredapplications. ThePAM2808featuresovercurrentprotectionandovertemperatureshutdown.ThePAM2808isstablewithace

P281

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications. SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetim