isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS= 280V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

Power MOSFETs 280V, 26A, N-channel

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SHINDENGEN

Power MOSFETs　THD

•Low Ron\n•High Speed Switching\n•High Avalanche Durability, High di/dt Durability;

Shindengen

新电元

INTEL(英特尔)
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INTEL(英特尔)

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