isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.59 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.6 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：750.55 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFET

文件：754.97 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFETs　SMD

•SMD\n•4.5V Gate Drive\n•Low Capacitance;

Shindengen

新电元

Power MOSFETs　SMD

•SMD\n•Low Capacitance;

Shindengen

新电元

按键开关

CARLING

包装：散装 类别：开关 按钮开关 描述：SWITCH PUSH BUTTON

CARLINGTECH

海洋技术

包装：托盘 类别：开关 按钮开关 描述：SWITCH PUSH BUTTON

CARLINGTECH

海洋技术

包装：托盘 类别：开关 按钮开关 描述：SWITCH PUSH BUTTON

CARLINGTECH

海洋技术