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P25Q21H

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-IR

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-IT

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-IW

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-IY

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-KR

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-KT

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-KW

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-NXH-KY

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

P25Q21HA-SSH-IR

Ultra Low Power, 2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2 Description The P25Q 21H 11H 06H is a serial interface Flash memory device designed for use in a wide variety of high volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the dev

文件:2.83247 Mbytes 页数:77 Pages

PUYA

普冉股份

技术参数

  • Max CLK:

    104MHz

  • Vcc:

    2.3V~3.6V

  • Temp:

    -40℃~105℃

  • IO Bus:

    Single/Dual/Quad

  • ESD:

    2kv

  • Cycle:

    100k

  • Retention:

    20Y

  • Package:

    SOP8(150 mil)

供应商型号品牌批号封装库存备注价格
PUYA/普冉
24+
SOP8(150 mil),TSSOP8,USON8(1.5
45000
PUYA系列在售销量大
询价
PUYA/普冉
25+
SOP-8
188600
全新原厂原装正品现货 欢迎咨询
询价
普冉(PUYA)
2447
USON-8_1.5x1.5x0.45mm
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
普冉(PUYA)
2021+
USON-8_1.5x1.5x0.45mm
499
询价
PUYA/普冉
2021+
DFN23
900000
原装正品现货,诚信经营。假一赔十
询价
PUYA
23+
SOP8
50000
全新原装正品现货,支持订货
询价
PUYA普冉
23+
SOP-8
15278
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
PUYA
22+
N/A
2500
进口原装,优势现货
询价
PUYA
22+
SOP-8 150mil
60000
普冉全线/只有原装/价格优势/全线可订
询价
PUYA(普冉)
24+
USON8EP(1.5x1.5)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多P25Q21H供应商 更新时间2025-10-6 11:01:00