VN2406D

N-Channel240-V(D-S)MOSFETs

FEATURES ●LowOn-Resistance:3.5Ω ●SecondaryBreakdownFree:260V ●LowPower/VoltageDriven ●LowInputandOutputLeakage ●ExcellentThermalStability BENEFITS ●LowOffsetVoltage ●Full-VoltageOperation ●EasilyDrivenWithoutBuffer ●LowErrorVoltage ●NoHigh-Temperature“

VN2406L

N-Channel240-V(D-S)MOSFETs

FEATURES ●LowOn-Resistance:3.5Ω ●SecondaryBreakdownFree:260V ●LowPower/VoltageDriven ●LowInputandOutputLeakage ●ExcellentThermalStability BENEFITS ●LowOffsetVoltage ●Full-VoltageOperation ●EasilyDrivenWithoutBuffer ●LowErrorVoltage ●NoHigh-Temperature“

VN2406L

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

VN2406L

TMOSFETTransistor

TMOSFETTransistor N–Channel—Enhancement

VN2406L

N-ChannelEnhancement-Mode

Features ❏Freefromsecondarybreakdown ❏Lowpowerdriverequirement ❏Easeofparalleling ❏LowCISSandfastswitchingspeeds ❏Excellentthermalstability ❏IntegralSource-Draindiode ❏Highinputimpedanceandhighgain ❏ComplementaryN-andP-channeldevices Applications ❏Motor

VN2406L

SmallSignalMOSFET200mAmps,240Volts

SmallSignalMOSFET200mAmps,240VoltsN−ChannelTO−92 200mAMPS240VOLTSRDS(on)=6Ω

VN2406L-G

N-ChannelEnhancement-ModeVerticalDMOSFET

VN2406L-G

N-ChannelEnhancement-ModeVerticalDMOSFET

XC2406

1.6GHzON/OFFFunctionLNA

YF2406IT

ElectCuSingleInsulWireFerrules,SmoothFunnelEntry,22-24AWG,0.41L,TinPlated,Pink,ForuseonCuCond.