isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：352.83 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：790.62 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFETs　SMD

•SMD\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元

Thyristor Modules

文件：910.39 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

Thyristor Modules

文件：279.09 Kbytes 页数：5 Pages

SEMIKRON

赛米控丹佛斯