P2000SB

Marking：P20B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P2000SC

Marking：P20C；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P2000TA

Marking：P20A；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P2000TB

Marking：P20B；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

STP20NK50Z

Marking：P20NK50Z；Package：TO-220；N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STP20NK50Z

Marking：P20NK50Z；Package：TO-220；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STP20NM60

Marking：P20NM60；Package：TO-220；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STP20NM60FP

Marking：P20NM60FP；Package：TO-220FP；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

SVTP209R7NP7

Marking：P209R7NP7；Package：TO-247-3L；130A, 200V N-CHANNEL MOSFET

DESCRIPTION SVTP209R7NP7isanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformanceandhigh

BM2P209TF-E2

Marking：P209T；Package：SOP8；PWM Type DC/DC Converter IC Built-in Switching MOSFET for Non-Isolated Type