N-Channel 30 V (D-S) MOSFET

文件：1.13554 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

4.5V Drive Nch MOSFET

文件：1.12527 Mbytes 页数：7 Pages

ROHM

罗姆

N-Channel 30 V (D-S) MOSFET

文件：1.10846 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

150A, 30V N-CHANNEL ENHANCEMENT MODE POWER

 DESCRIPTION The UTC UT150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.  FEATURES TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON

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UTC

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