丝印：P11；Package：VMT3；PNP -200mA -30V Digital Transistors (Bias Resistor Built-in Transistors)

文件：355.34 Kbytes 页数：7 Pages

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丝印：P11；Package：EMT3；PNP -200mA -30V Digital Transistors (Bias Resistor Built-in Transistors)

文件：355.34 Kbytes 页数：7 Pages

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丝印：P11；Package：VMT3；-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

文件：63.96 Kbytes 页数：2 Pages

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丝印：P11；Package：VMT3；-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

文件：184.9 Kbytes 页数：3 Pages

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丝印：P11；Package：EMD6；Switching Diode

文件：997.92 Kbytes 页数：3 Pages

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丝印：P11；Package：EMD6；Switching diode

文件：162.41 Kbytes 页数：3 Pages

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丝印：P1100EA；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82579 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P1100EB；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82166 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P1100EC；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82987 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P11LA；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.73964 Mbytes 页数：6 Pages

UNSEMI

优恩半导体