丝印：P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Battery Management Application  Power Management Functions  DC-DC Converters

文件：464.72 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Battery Management Application  Power Management Functions  DC-DC Converters

文件：464.72 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Battery Management Application  Power Management Functions  DC-DC Converters Features and Benef

文件：397.38 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Battery Management Application  Power Management Functions  DC-DC Converters Features and Benef

文件：397.38 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：P0；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：P0；Package：SOT-23-3；N- Enhancement Mode Field Effect Transistor

文件：3.57508 Mbytes 页数：7 Pages

PJSEMI

平晶半导体

丝印：P0；Package：DSBGA；2.8 V to 22 V Priority Power MUX with Seamless Switchover

文件：1.61375 Mbytes 页数：29 Pages

TI

德州仪器

丝印：P0；Package：DSBGA；2.8-V to 22-V Priority Power MUX with Seamless Switchover

文件：2.66823 Mbytes 页数：40 Pages

TI

德州仪器

丝印：P04；Package：SC-74A；Low-power inverter

1. General description The 74AUP1G04 is a single inverter. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire

文件：294.3 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：p04；Package：SC-74A；Low-power inverter

1. General description The 74AUP1G04-Q100 is a single inverter. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the en

文件：260.81 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司