Package：轴向；包装：散装 类别：电阻器 通孔式电阻器 描述：RES 1.2K OHM 10% 2W AXIAL

OHMITE

Package：轴向；包装：卷带（TR） 类别：电阻器 通孔式电阻器 描述：RES 1.2K OHM 10% 2W AXIAL

OHMITE

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：43.64 Kbytes 页数：2 Pages

POLYFET

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：157.56 Kbytes 页数：6 Pages

POINN