Package：轴向；包装：卷带（TR） 类别：电阻器 通孔式电阻器 描述：RES 12K OHM 10% 1W AXIAL

OHMITE

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

文件：38.89 Kbytes 页数：2 Pages

POLYFET

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Description The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simpli fied giving advantages of cost reduction and reduced size. Applications include power suppli

文件：82.66 Kbytes 页数：7 Pages

IRF

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Description The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simpli fied giving advantages of cost reduction and reduced size. Applications include power suppli

文件：82.66 Kbytes 页数：7 Pages

IRF