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STB659B

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STB659B

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STU659B

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU659B

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

SZ659B

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC discrete Semiconductors

SZ659B

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC discrete Semiconductors

UPC659A

8-BITA/DCONVERTERFORVIDEOPROCESSINGWITHREFERENCEGENERATORANDCLAMPCIRCUIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC659A

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Resolution:8-bit •Conversionrate:20Msps •Differentialnon-linearity:±0.5LSBMAX. •Powersupply:+5V •Analoginputvoltage:1.0Vp-p •Powerconsumption:215mWTYP. •Built-incircuit:Sampleandholdcircuit Clampcircuit(Clampvoltageandclamppulsemustbe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC659AGS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Resolution:8-bit •Conversionrate:20Msps •Differentialnon-linearity:±0.5LSBMAX. •Powersupply:+5V •Analoginputvoltage:1.0Vp-p •Powerconsumption:215mWTYP. •Built-incircuit:Sampleandholdcircuit Clampcircuit(Clampvoltageandclamppulsemustbe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC659AGS

8-BITA/DCONVERTERFORVIDEOPROCESSINGWITHREFERENCEGENERATORANDCLAMPCIRCUIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

详细参数

  • 型号:

    OPA659IDBVR

  • 功能描述:

    高速运算放大器 650MHz unity gain stable JFET Inp amp

  • RoHS:

  • 制造商:

    Texas Instruments

  • 通道数量:

    1 电压增益

  • dB:

    116 dB

  • 输入补偿电压:

    0.5 mV

  • 转换速度:

    55 V/us

  • 工作电源电压:

    36 V

  • 电源电流:

    7.5 mA

  • 最大工作温度:

    + 85 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-8

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TI/德州仪器
25+
SOT23-5
32360
TI/德州仪器全新特价OPA659IDBVR即刻询购立享优惠#长期有货
询价
SOT23-5
1714
TI
728
全新原装公司现货
询价
TI
23+
SOT23-5
535
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
TI/德州仪器
22+
SOT23-5
3197
原装正品
询价
TI
2021+
SOT23-5
6800
原厂原装,欢迎咨询
询价
TI/德州仪器
23+
SOT23-5
15000
全新原装现货,价格优势。
询价
TI(德州仪器)
24+
SOT23-5
7078
原厂可订货,技术支持,直接渠道。可签保供合同
询价
TI(德州仪器)
24+
SOT-23-5
7391
原厂可订货,技术支持,直接渠道。可签保供合同
询价
TI
1702+
SOT23-5
8660
只做原装进口,假一罚十
询价
TI
25+23+
SOT23-5
25464
绝对原装正品全新进口深圳现货
询价
更多OPA659IDBVR供应商 更新时间2025-7-30 10:12:00