OPA2333-HT 1.8-V Micropower CMOS Operational Amplifier Zero-Drift Series

1 Features 1• Low Offset Voltage: 26 μV (Maximum) • 0.01-Hz to 10-Hz Noise: 1.5 μVPP • Quiescent Current: 50 μA • Single-Supply Operation • Supply Voltage: 1.8 V to 5.5 V • Rail-to-Rail Input and Output • Supports Extreme Temperature Applications • Controlled Baseline • One Assembly/Test

文件：1.1039 Mbytes 页数：34 Pages

TI

德州仪器

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合

P-Channel 12-V (D-S) MOSFET

文件：243.12 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司