QPA2310

5.0–6.0GHz50WGaNPowerAmplifier

KeyFeatures •FrequencyRange:5.0–6.0GHz •PSAT(PIN=25dBm):48dBm •PAE(PIN=25dBm):49 •PowerGain(PIN=25dBm):23dB •Bias:VD=50V,IDQ=300mA •PackageDimensions:7.0x7.0x0.82mm

QPA2310EVB

5.0–6.0GHz50WGaNPowerAmplifier

KeyFeatures •FrequencyRange:5.0–6.0GHz •PSAT(PIN=25dBm):48dBm •PAE(PIN=25dBm):49 •PowerGain(PIN=25dBm):23dB •Bias:VD=50V,IDQ=300mA •PackageDimensions:7.0x7.0x0.82mm

RF2310

WIDEBANDGENERALPURPOSEAMPLIFIER

ProductDescription TheRF2310isageneralpurpose,low-cost,highlinearityRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasilycascadable50Ωgainblock.ApplicationsincludeIF

RF2310PCBA

WIDEBANDGENERALPURPOSEAMPLIFIER

ProductDescription TheRF2310isageneralpurpose,low-cost,highlinearityRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasilycascadable50Ωgainblock.ApplicationsincludeIF

RLTCM-2310D

MidinfraredEmittingLaserDiode

RLTCM-2310D

midinfraredemittinglaserdiode

RM2310

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=3A RDS(ON)

RM2310V

N-ChannelEnhancementModePowerMOSFET

Feature Rds(on)

RN2310

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN1310,RN1311

ROS-2310

VoltageControlledOscillator