NPN Pho to tran sistor with Base-Emit ter Resistor

Description The OP705 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitte

文件：476.88 Kbytes 页数：2 Pages

OPTEK

Package：T-1；包装：散装 类别：传感器，变送器 光学传感器 - 光电晶体管 描述：SENSOR PHOTO 935NM TOP VIEW T1

OPTE

欧思微电子

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

文件：36.69 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

文件：35.85 Kbytes 页数：2 Pages

POLYFET

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 3K at IC=1 Amp * Ptot=1 Watt APPLICATIONS * Lamp, solenoid and relay drivers

文件：72.59 Kbytes 页数：3 Pages

ZETEX