NPN Pho totransistor with Collector- Emitter Capacitor

Description The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. Features • Supresses h

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OPTEK

NPN Silicon Phototransistor

Descripton: OP550, OP552, OP555, OP750, and OP770 series consists of a NPN silicon phototransistor molded in an epoxy package with a wide receiving angle that provides relatvely even recepton over a large area. The OP750 and OP770 have additonal circuitry to enhance the operaton of the device for

文件：1.25623 Mbytes 页数：6 Pages

TTELEC

Package：径向；包装：散装 类别：传感器，变送器 光学传感器 - 光电晶体管 描述：SENSOR PHOTO 935NM SIDE VIEW RAD

OPTE

欧思微电子

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

文件：149.13 Kbytes 页数：7 Pages

POINN

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th

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STMICROELECTRONICS

意法半导体

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This device is suitable to drive a DC motor in

文件：95.62 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体