NPN Plastic Silicon Phototransistor

Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 and OP793 series devices provides relaƟvely even recepƟon over a large area. The narrow receiving angle (25°) of the OP598 and OP79

文件：603.08 Kbytes 页数：7 Pages

TTELEC

Phototransistor

TT Electronics

Package：TO-18-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：传感器，变送器 光学传感器 - 光电晶体管 描述：SENSOR PHOTO 890NM TOP VIEW TO18

OPTE

欧思微电子

NPN Plastic Silicon Phototransistor

Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 and OP793 series devices provides relaƟvely even recepƟon over a large area. The narrow receiving angle (25°) of the OP598 and OP79

文件：603.08 Kbytes 页数：7 Pages

TTELEC

OPA598 85V, 350mA Output Current, Power Amplifier

1 Features • Wide power-supply range: 8V to 85V • High output current: 350mA • Low noise: 6nV/√Hz at 10kHz • Wide bandwidth: 10MHz GBW • High slew rate: 40V/μs • Low offset voltage: ±50μV • Low offset voltage drift: ±1μV/°C • Rail-to-rail output • Disable function • Quiescent current: E

文件：1.91142 Mbytes 页数：32 Pages

TI

德州仪器

OPA598 85V, 350mA Output Current, Power Amplifier

1 Features • Wide power-supply range: 8V to 85V • High output current: 350mA • Low noise: 6nV/√Hz at 10kHz • Wide bandwidth: 10MHz GBW • High slew rate: 40V/μs • Low offset voltage: ±50μV • Low offset voltage drift: ±1μV/°C • Rail-to-rail output • Disable function • Quiescent current: E

文件：1.91142 Mbytes 页数：32 Pages

TI

德州仪器