DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The OP292/OP492 are low cost, general purpose dual and quad operational amplifiers designed for single-supply applications and are ideal for +5 olt systems. FEATURES Single-Supply Operation: 4.5 V to 33 V Input Common-Mode Includes Ground Output Swings to Ground

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Dual/Quad Single-Supply Operational Amplifiers

GENERAL DESCRIPTION The OP292/OP492 are low cost, general-purpose dual and quad operational amplifiers designed for single-supply applications and are ideal for 5 V systems. FEATURES Single-supply operation: 4.5 V to 33 V Input common-mode includes ground Output swings to ground

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Dual/Quad Single-Supply Operational Amplifiers

FEATURES Single-supply operation: 4.5 V to 33 V Input common-mode includes ground Output swings to ground High slew rate: 3 V/μs High gain bandwidth: 4 MHz Low input offset voltage High open-loop gain No phase inversion APPLICATIONS Disk drives Mobile phones Servo controls Modems and fax

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Dual/Quad Single-Supply Operational Amplifiers

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双通道、单电源运算放大器

OP292/OP492分别为双通道和四通道、低成本、通用运算放大器，针对单电源应用而设计，非常适合5 V系统。OP292/OP492系列采用ADI公司的CBCMOS工艺制造，具有一个PNP输入级，输入电压范围包括地电压。BiCMOS输出级使输出摆幅可以达到地电压，同时提供吸电流。 OP292/OP492系列为单位增益稳定型，速度与性能俱佳，适合单电源或双电源操作。二者均提供高压摆率和高带宽，开环增益超过40,000，失调电压低于800 Ω (OP292)和1 mV (OP492)。所有这些特性组合，以及低电源电流，使得OP292/OP492系列成为电池供电应用的较佳选择。\n\n • 单电源供电：4.5 V至33 V\n\n• 输入共模范围包括地电压\n\n• 输出摆幅可以达到地电压\n\n• 高压摆率: 3 V/µs\n\n• 高增益带宽：4 MHz\n\n• 低输入失调电压\n\n• 高开环增益\n\n• 无反相;

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GaAs plastic infrared emitting diode

TT Electronics

Dual/Quad Single-Supply Operational Amplifiers

FEATURES Single-supply operation: 4.5 V to 33 V Input common-mode includes ground Output swings to ground High slew rate: 3 V/μs High gain bandwidth: 4 MHz Low input offset voltage High open-loop gain No phase inversion APPLICATIONS Disk drives Mobile phones Servo controls Modems and fax

文件：343.4 Kbytes 页数：20 Pages

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Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC