Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

GENERAL DESCRIPTION The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ±5 V dual supplies. FEATURES Single-supply oper

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Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

FEATURES Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal APPLICATIONS Industrial process control Battery-powered instrumentatio

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MicroConverter짰 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU

文件：908.68 Kbytes 页数：88 Pages

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Micropower Single-Supply Rail-to-Rail Input/Output Op Amps

文件：605.84 Kbytes 页数：24 Pages

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微功耗、单电源、轨到轨输入/输出运算放大器

OP191/OP291/OP491分别是单通道/双通道/四通道、微功耗、单电源、3 MHz带宽放大器，具有轨到轨输入与输出特性。所有器件均保证可采用3 V单电源和±5 V双电源工作。\n\nOP191系列采用ADI公司的CBCMOS工艺制造，具有独特的输入级，输入电压可以安全地超过任一电源电压10 V，而不会发生相位翻转或闩锁。输出电压摆幅可以达到电源电压的数毫伏范围内，并且可以持续提供吸电流或源电流，直到输出电压与电源电压相等。\n\n具体应用包括便携式电信设备、电源控制与保护，以及具有宽输出范围的传感器接口。要求采用轨到轨输入放大器的传感器包括霍尔效应传感器、压电传感器和阻性传感器。\n\ • 单电源供电：2.7 V至12 V\n\n• 宽输入电压范围\n\n• 轨到轨输出摆幅\n\n• 低电源电流：每个放大器300 µA\n\n• 宽带宽：3 MHz\n\n• 压摆率：0.5 V/µs\n\n• 低失调电压: 700 µV\n\n• 无反相;

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GaAs plastic infrared emitting diode

TT Electronics

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

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TTELEC

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

Optek

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC