Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Precision, Low Power, Micropower Dual Operational Amplifier

GENERAL DESCRIPTION The OP290 is a high performance micropower dual op amp that operates from a single supply of 1.6 V to 36 V or from dual supplies of ±0.8 V to ±18 V. Input voltage range includes the negative rail allowing the OP290 to accommodate input signals down to ground in single-supply o

文件：165.19 Kbytes 页数：12 Pages

AD

亚德诺

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC