Hi-Reliability GaAIAs Infrared Emitting Diode

Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emiƫng diode (GaAs), mounted in a miniature hermeƟcally sealed “pill” package with an enhanced temperature range and a high power output. These devices are designed for direct mounƟng to PCBo

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TTELEC

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes 页数：3 Pages

OPTEK

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：447.57 Kbytes 页数：3 Pages

OPTEK

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes 页数：3 Pages

OPTEK

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes 页数：3 Pages

OPTEK

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：447.57 Kbytes 页数：3 Pages

OPTEK

High-reliability GaAIAs infrared emitting diode

•Processed to OPTEK’s military screening program, patterned after MIL-PRF-19500\n• Miniature hermetically sealed “pill” package\n• Twice the power output of GaAs at same drive current\n• “S” level screening available\n• Mechanically and spectrally matched to OP600 phototransistors;

TT Electronics

Package：微型粒状；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 890NM 100MA MINI-PILL

OPTE

欧思微电子

Package：微型粒状；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 890NM 100MA MINI-PILL

OPTE

欧思微电子