ON222 is an OR / NAND circuit providing the logical function Q = NOT (AB).(CD).(EF)

Delay [ns] = tpd = f(SL, L) with SL = Input Slope [ns] ; L = Output Load [pF] Output Slope [ns] = op_sl = f(L) with L = Output Load [pF] AC Characteristics : Tj = 25°C VDD = 3.3V Typical Process

文件：17.01 Kbytes 页数：2 Pages

AMSCO

艾迈斯欧司朗

ON222 is an OR/NAND circuit providing the logical function Q = NOT [ (A+B).(C+D).(E+F) ].

Delay [ns] = tpd = f(SL, L) with SL = Input Slope [ns] ; L = Output Load [pF]\nOutput Slope [ns] = op_sl = f(L) with L = Output Load [pF]AC Characteristics : Tj = 25°C VDD = 3.3V Typical Process

ams-OSRAM

艾迈斯欧司朗

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown • Low threshold. APPLICATIONS • Power management • DC-DC converters • General purpose switch.

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PHI

PHI

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated

文件：105.36 Kbytes 页数：5 Pages

PANASONIC

松下