UC1710J.A

HighCurrentFETDriver

FEATURES ·TotemPoleOutputwith6A Source/SinkDrive ·3nsDelay ·20nsRiseandFallTimeinto2.2nF ·8nsRiseandFallTimeinto30nF ·4.7Vto18VOperation ·InvertingandNon-InvertingOutputs ·Under-VoltageLockoutwith Hysteresis ·ThermalShutdownProtection ·MINIDIPandPo

UC1710SP

HighCurrentFETDriver

UC1710SP

HighCurrentFETDriver

UC1710-SP

HighCurrentFETDriver

UC1710-SP

HighCurrentFETDriver

UDZSTE-1710B

Constantvoltagecontrol

UPA1710

MOSFieldEffectPowerTransistors

SWITCHING P-CHANNELPOWERMOSFFT INDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistor designedforDC/DCconverterandpowermanagement applicationsofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=70mWMax.(VGS=–10V,ID=–2.5A) RDS(on)2=

UPA1710A

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=70mW(MAX.)(VGS=–10V,ID=–2.5A) RDS(on)2=160mW(MAX.)(VGS=–4V,ID=–2.0A) ·LowCiss:Ciss=840pF(TYP.) ·Built-inG-Sprotectiondiode ·Smallandsurfacemountpackage(Power

UPA1710AG

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=70mW(MAX.)(VGS=–10V,ID=–2.5A) RDS(on)2=160mW(MAX.)(VGS=–4V,ID=–2.0A) ·LowCiss:Ciss=840pF(TYP.) ·Built-inG-Sprotectiondiode ·Smallandsurfacemountpackage(Power

VDA1710CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein