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零件编号	下载&订购	功能描述	制造商&上传企业
OM6N100NK	文件：19.02 Kbytes Page：2 Pages	POWER MOSFETS IN A TO-3 PACKAGE	ETCList of Unclassifed Manufacturers 未分类制造商
6N100F	文件：820.74 Kbytes Page：4 Pages	PowerMOSFETs Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch	IXYS IXYS Integrated Circuits Division
AP6N100H	文件：73.99 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET	A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司
AP6N100J	文件：74.25 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET	A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司
AP6N100JV	文件：72.64 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET	A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司
IXFH6N100	文件：372.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFH6N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division
IXFH6N100	文件：77.8 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division
IXFH6N100F	文件：820.74 Kbytes Page：4 Pages	PowerMOSFETs Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch	IXYS IXYS Integrated Circuits Division
IXFH6N100F	文件：372.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFH6N100Q	文件：373.14 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFH6N100Q	文件：124.68 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Integrated Circuits Division
IXFM6N100	文件：77.8 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division
IXFM6N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division
IXFT6N100F	文件：820.74 Kbytes Page：4 Pages	PowerMOSFETs Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch	IXYS IXYS Integrated Circuits Division
IXFT6N100Q	文件：124.68 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Integrated Circuits Division
MTH6N100	文件：293.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MTV6N100E	文件：298.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MTV6N100E	文件：287.06 Kbytes Page：11 Pages	PowerFieldEffectTransistor	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MTV6N100E	文件：262.47 Kbytes Page：10 Pages	TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM TMOSE-FET™ PowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresur	MotorolaMotorola, Inc 摩托罗拉

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型号：
OM6N100NK
功能描述：
POWER MOSFETS IN A TO-3 PACKAGE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	OM6-TC	AD	02+		1		询价
深圳市佳鑫美电子科技有限公司	OM7000HT/C1	PHILIPS	22+	TQFP64	2568	原装优势!绝对公司现货	询价
深圳市宏世佳电子科技有限公司	OM7000HT/C1	PHILIPS	2023+	TQFP64	3827	全新原厂原装产品、公司现货销售	询价
深圳市百视威讯电子科技有限公司	OM7001HN/C200		23+	N/A	46590	正品授权货源可靠	询价
深圳市威尔健半导体有限公司	OM7001HN/C200	NXP/恩智浦	23+	QFN20	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	OM7001HN/C200	NXP/恩智浦	2022	QFN20	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市特莱科技有限公司	OM7001HN/C200	NXP/恩智浦	22+21+	QFN20	20000	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳市得捷芯城科技有限公司	OM7001HN/C200	NXP/恩智浦	23+	NA/	23250	原厂直销,现货供应,账期支持!	询价
深圳市创新迹电子有限公司	OM7001HN/C200	NXP/恩智浦	22+	QFN20	20000	原装现货,实单支持	询价
深圳市安富世纪电子有限公司	OM7001HN/C200	ADI	23+	QFN20	8000	只做原装现货	询价

更多OM6N100NK供应商更新时间2024-4-27 15:30:00

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