OM6501ST数据手册Infineon中文资料规格书
OM6501ST规格书详情
描述 Description
500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal PackageDESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
特性 Features
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
技术参数
- 型号：
OM6501ST
- 功能描述：
INSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-257AA PACKAGE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
23+ |
BGA7*7 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
PHI |
23+ |
N/A |
12300 |
询价 | |||
PHI |
24+ |
BGA |
2568 |
原装优势!绝对公司现货 |
询价 | ||
恩XP |
24+ |
NA |
7500 |
只做原装正品 在原厂和代理搬货 |
询价 | ||
恩XP |
23+ |
47000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
PHI |
24+ |
BGA-S |
4897 |
绝对原装!现货热卖! |
询价 | ||
恩XP |
23+ |
SMD |
5000 |
原装正品,假一罚十 |
询价 | ||
PHI |
24+ |
BGA |
411 |
询价 | |||
恩XP |
1728+ |
? |
8450 |
只做原装进口,假一罚十 |
询价 | ||
IR |
23+ |
8000 |
只做原装现货 |
询价 |
