INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal PackageDESCRIPTION\nThe IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and reson • Isolated Hermetic Metal Package\n• High Input Impedance\n• Low On-Voltage\n• High Current Capability\n• Fast Turn-Off\n• Low Conductive Losses\n• Available Screened to MIL-S-19500, TX, TXV And S Levels;

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE

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500V N-channel IGBT

Omnirel

Oven Controlled Crystal Oscillator

文件：338.49 Kbytes 页数：2 Pages

EPSONTOYOCOM

爱普生

20 V, N-channel Trench MOSFET

文件：390.07 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, N-channel Trench MOSFET

文件：390.07 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司