INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal PackageDESCRIPTION\nThe IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and reson • Isolated Hermetic Metal Package\n• High Input Impedance\n• Low On-Voltage\n• High Current Capability\n• Fast Turn-Off\n• Low Conductive Losses\n• Available Screened to MIL-S-19500, TX, TXV And S Levels;

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE

文件：22.25 Kbytes 页数：2 Pages

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500V N-channel IGBT

Omnirel

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EPSONTOYOCOM

爱普生

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20 V, N-channel Trench MOSFET

文件：390.07 Kbytes 页数：15 Pages

NEXPERIA

安世