| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,5A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,25A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=39mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,25A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=39mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT7.5Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT25Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
NPNEpitaxialPlanarSiliconTransistorHigh-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight:0.9mm). •Highallowablepowerdissipation. Applications •DC | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
AllBandTVTunerICwithOn-chipPLL Description TheCXA3252NisamonolithicTVtunerICwhichintegrateslocaloscillatorandmixercircuitsforVHFband,localoscillatorandmixercircuitsforUHFband,anIFamplifierandatuningPLLontoasinglechip,enablingfurtherminiaturizationofthetuner. Features •Superiorcross | SonySONY 索尼 | Sony | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu | Dallas Dallas Semiconductor Corp. | Dallas | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaximIntegrated 美信半导体 | Maxim | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaximIntegrated 美信半导体 | Maxim | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu | Dallas Dallas Semiconductor Corp. | Dallas | ||
Isolated,DualChannel,RS-232LineDriver/Receiver | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIEMENS/西门子 |
22++ |
DIP9 |
5209 |
原装正品!诚信经营,实单价优! |
询价 | ||
SIEMENS |
23+ |
DIP9 |
18000 |
询价 | |||
SIEMENS |
20+ |
DIP9 |
11520 |
特价全新原装公司现货 |
询价 | ||
SIEMENS/西门子 |
2022+ |
DIP9 |
8600 |
英瑞芯只做原装正品 |
询价 | ||
SIEMENS/西门子 |
22+ |
DIP9 |
25502 |
郑重承诺只做原装进口现货 |
询价 | ||
SIEMENS/西门子 |
22+ |
DIP9 |
37240 |
只做原装正品现货 |
询价 | ||
SIEMENS |
2023+环保现货 |
3500 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | |||
SIEMENS/西门子 |
22+/23+ |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
SIEMENS |
18+ |
DIP9 |
999999 |
进口全新原装现货 |
询价 | ||
3000 |
公司存货 |
询价 |
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