NXH80T120L2Q0S2G: Power Module, T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT

The NXH80T120L2Q0S1G is a power module containing a T-type neutral point clamped (NPC) three level inverter consisting of two 80 A/1200 V half-bridge IGBTs with 40 A/1200 V half-bridge diodes and two 50 A/600 V NPC IGBTs with two 50 A/600 V NPC diodes. The module also contains an on−board thermistor NPC IGBT Specifications: VCE(SAT) = 1.4 V, ESW = 560 µJ\nFast IGBT with low VCE(SAT) for high efficiency\nHB IGBT Specifications: VCE(SAT) = 2.05 V, ESW = 1650 µJ\nFast IGBT with low VCE(SAT) for high efficiency\nCompact 65.9 mm x 32.5 mm x 12 mm Package\nSmall system size\nSolder Pins\nEasy mountin;

ONSEMI

安森美半导体

Q0PACK Module

文件：662.25 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

Q0PACK Module

文件：662.25 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

Murata
隔离式DC/DC转换器

MuRata

村田

上传：深圳市金嘉锐电子有限公司

NEXUSCHIPS
SMD

NexusChips

上传：深圳市兴联达电子有限公司(原兴达电子)